sot323 pnp silicon planar general purpose transistor issue 1 - december 1998 partmarking detail: - t19 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -30 v collector-emitter voltage v ces -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v continuous collector current i c -100 ma peak pulse current i em -200 ma base current i bm -200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector cut-off current i cbo -15 -4 na m a v cb = -30v v cb = -30v, t amb =150c collector-emitter saturation voltage v ce(sat) -75 -300 mv i c =-10ma, i b =-5ma -250 -600 mv i c =-100ma, i b =-5ma -300 -600 mv i c =-10ma* base-emitter saturation voltage v be(sat) -700 -850 mv i c =-10ma ,i b =-0.5ma i c =-100ma,i b =-5ma base-emitter voltage v be -600 -650 -750 -820 mv i c =-2ma, v ce =-5v i c =-10ma, v ce =-5v * collector-emitter saturation voltage at i c = 10ma for the characteristics going through the operating point i c = 11ma, v ce = 1v at constant base current. ZUMT858B
typical characteristics
electrical characteristics (continued) parameter symbol min. typ. max. unit conditions. noise figure n - 2 10 db v cb = -5v, i c =-200 m a, r g =2k w , f=1khz, d f=200hz CCCdb v cb = -5v, i c =-200 m a, r g =2k w , f=30hz to 15khz at -3db points dynamic characteristics group b h ie 3.2 4.5 8.5 k w v ce =-5v i c =-2ma f=1khz group b h re 2 x10 -4 group b h fe 240 330 500 group b h oe C30 60 m s static forward current ratio group b h fe 150 i c =-0.01ma,v ce =-5v 220 290 475 i c =-2ma, v ce =-5v C 200 C i c =-100ma,v ce =-5v transition frequency f t C 150 C mhz i c =-10ma,v ce =-5v f=100mhz collector-base capacitance c obo 4.5 pf v cb =-10v, f=1mhz ZUMT858B
|
